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MA: Fachverband Magnetismus

MA 59: Spin Excitations II/ Spin Scattering

MA 59.4: Talk

Thursday, March 17, 2011, 18:00–18:15, HSZ 04

Side-Jump Scattering Contribution to Anomalous Hall Effect from ab initio — •Jürgen Weischenberg¹, Frank Freimuth¹, Jairo Sinova², Stefan Blügel¹, and Yuriy Mokrousov¹ — ¹Peter Grünberg Institut & Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany — ²Department of Physics, Texas A&M University, College Station, Texas 77843-4242, USA

The anomalous Hall conductivity may be decomposed into a scattering-dependent and a scattering-independent term. The extrinsic disorder-driven contribution to the scattering-independent term, the so-called side jump, is usually obtained by extrapolation from calculations with finite disorder. Recently it has been shown [1] that the side jump contribution to the anomalous Hall effect may be calculated directly from the electronic structure of a perfect crystal if a delta-correlated Gaussian disorder model is assumed. We implemented this approach within the full-potential linearized augmented plane-wave method (FLAPW) and computed the side-jump induced transverse conductivity for a variety of ferromagnetic materials such as Fe, Ni, FePt and FePd by means of Wannier interpolation [2]. To interpret our findings we compare them to theoretical and experimental literature values. Financial support by the HGF-YIG Programme VH-NG-513 is gratefully acknowledged.

[1] A. A. Kovalev et al., PRL 105, 036601 (2010)

[2] F. Freimuth et al., Phys. Rev. B 78, 035120 (2008)