Dresden 2011 – wissenschaftliches Programm
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MA: Fachverband Magnetismus
MA 63: Poster II (Surface Magnetism/ Magnetic Imaging/ Topological Insulators/ Spin Structures and Magnetic Phase Transitions/ Graphene/ Magnetic Thin Films/ Magnetic Semiconductors/ Magnetic Half-metals and Oxides/ Spin-dependent Transport/ Spin Excitations and Spin Torque/ Spin Injection and Spin Currents in Heterostructures/ Spintronics/ Magnetic Storage and Applications)
MA 63.47: Poster
Freitag, 18. März 2011, 11:00–14:00, P2
Transparent field effect transistors with spin-polarized electrons — Tim Kaspar, Danilo Bürger, Ilona Skorupa, Vicki Kühn, Artur Erbe, Manfred Helm, and •Heidemarie Schmidt — Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden
We focus our research on possible semiconductor spintronics devices. Our work is motivated by magnetoresistance effects in magnetic ZnO thin films that have been detected below 50 K and are due to spin-polarized electrons [1]. Our aim is to control the characteristics of a ZnO-based Junction Field Effect Transistor (J- FET) by manipulating spin polarized electrons in the magnetic channel of the J-FET by external electrical and magnetic fields. The magnetic channel layers have been deposited by pulsed laser deposition on Al2O3 and ZnO substrates. The gate, source and drain contact was structured by electron beam lithography. The gate contact was fabricated by reactive sputtering of Ag [2]. The main characteristics of the ZnO-based J-FET with magnetic channel will be presented.
[1] Qingyu Xu, H. Schmidt et al. , Phys. Rev. Lett. 101, 076601(2008)
[2] H.Frenzel et al., Appl. Phy. Lett. 92, 192108 (2008)