Dresden 2011 – wissenschaftliches Programm

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MA: Fachverband Magnetismus

MA 63: Poster II (Surface Magnetism/ Magnetic Imaging/ Topological Insulators/ Spin Structures and Magnetic Phase Transitions/ Graphene/ Magnetic Thin Films/ Magnetic Semiconductors/ Magnetic Half-metals and Oxides/ Spin-dependent Transport/ Spin Excitations and Spin Torque/ Spin Injection and Spin Currents in Heterostructures/ Spintronics/ Magnetic Storage and Applications)

MA 63.61: Poster

Freitag, 18. März 2011, 11:00–14:00, P2

Temperature dependent antisymmetric Planar Hall effects in Co₂FeAl_xSi_y Heusler alloys — •Jan Heinen¹, Jan Rhensius², Mathias Kläui^1,2, Tanja Graf³, and Claudia Felser³ — ¹Fachbereich Physik, Universität Konstanz, 78457 Konstanz, Germany — ²SwissFEL, Paul Scherrer Institut, 5232 Villigen PSI, Switzerland and Laboratory for Nanomagnetism and Spin Dynamics, Ecole Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland — ³Institut für Anorganische Chemie und Analytische Chemie, Universität Mainz, 55128 Mainz, Germany

Very promising candidates for future spintronic devices are Co-based Heusler alloys like Co₂FeAl_xSi_y, which generally possess a high Curie temperature and a high spin polarization (>0.5) [1]. Here we report on magnetoresistance measurements of µm-wide nanowires using contacts in longitudinal magnetoresistance (AMR) and Hall geometry (planar Hall effect (PHE)) [2]. For the AMR we observe an overall decrease in resistance with increasing field, whilst first results indicate an antisymmetric contribution in the PHE, whose origin is still under debate. A correlation to crystal symmetry was suggested for semiconductors [3]. We therefore study its dependence on applied field, field angle, temperature and the direction of growth on the substrate to gain further insight into this effect. References: [1] T. M. Nakatani et al., J. Appl. Phys. 102, 033916 (2007). [2] P. K. Muduli et al., Phys. Rev. B 72, 104430 (2005). [3] H. T. He et al., J. Appl. Phys. 107, 063902 (2010).