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Dresden 2011 – wissenschaftliches Programm

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MA: Fachverband Magnetismus

MA 63: Poster II (Surface Magnetism/ Magnetic Imaging/ Topological Insulators/ Spin Structures and Magnetic Phase Transitions/ Graphene/ Magnetic Thin Films/ Magnetic Semiconductors/ Magnetic Half-metals and Oxides/ Spin-dependent Transport/ Spin Excitations and Spin Torque/ Spin Injection and Spin Currents in Heterostructures/ Spintronics/ Magnetic Storage and Applications)

MA 63.75: Poster

Freitag, 18. März 2011, 11:00–14:00, P2

Simulation of spin-polarized scanning tunneling microscopy and spectroscopy on magnetic nanostructures — •Krisztian Palotas1, Werner Hofer2, and Laszlo Szunyogh11Budapest University of Technology and Economics, Department of Theoretical Physics, Budapest, Hungary — 2University of Liverpool, Surface Science Research Centre, Liverpool, UK

We developed a method for simulating spin-polarized scanning tunneling microscopy (SP-STM) and spectroscopy (STS) from first principles. It is based on the work of Heinze [Appl. Phys. A 85, 407 (2006)], where we made the following developments: (1) treatment of chemically inequivalent surface atoms is included, thus, enabling imaging of complex magnetism in supported atomic clusters. (2) We take into account local electron workfunction variations on the surface, which becomes particularly important in the vicinity of atomic steps. (3) Tip electronic structure is considered going beyond the Tersoff-Hamann model. (4) By including bias voltage in our model differential tunneling (dI/dV) spectra and other bias dependent properties can be calculated.

The main advantage of the presented method is that it can be applied based on results obtained by any ab initio electronic structure code. We present simulation results on a few magnetic surface structures and compare them to experiments, e.g. considering a Cr monolayer or island with noncollinear spin structure on Au(111).

Acknowledgements: Magyary Foundation, EEA and Norway Grants, Hungarian Scientific Research Fund (OTKA-K77771, OTKA-IN83114).

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