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MI: Fachverband Mikrosonden
MI 3: TEM- and SEM-based Material Analysis
MI 3.3: Vortrag
Montag, 14. März 2011, 16:00–16:15, BEY 81
TEM study on light induced crystallization of amorphous silicon — •Martin Schade1, Teimuraz Mchedlidze2, Martin Kittler2, and Hartmut S. Leipner1 — 1Interdisziplinäres Zentrum für Materialwissenschaften, Martin-Luther-Universität Halle-Wittenberg, D-06099 Halle — 2IHP/BTU Joint Lab, Konrad-Wachsmann-Allee 1, D-03046 Cottbus und IHP Microelectronics, Im Technologiepark 25, D-15236 Frankfurt (Oder)
HR-TEM and STEM-analytics have been carried out in order to characterize the influence of laser power during light induced crystallization (LIC) of amorphous silicon. Therefore, a 60 nm thick amorphous silicon layer and a 120 nm thick silicon dioxide cover layer have been deposited on quartz substrate by means of RPECVD. LIC was performed by treating the samples with a laser operating at a wavelength of 532 nm with a spot size of around 1 µ m2. The laser power was varied in order to achieve different crystalline fractions which could be controlled by Raman-microscopy.
TEM cross-sections exhibit that at an optimal laser power large undulating, mono-crystalline grains are formed. Lower laser powers lead to mixtures of defect rich crystalline grains and nano-crystallites. A higher laser power results in an ablation process with a massive formation of silicon dioxide.