Dresden 2011 – wissenschaftliches Programm

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MM: Fachverband Metall- und Materialphysik

MM 31: Postersitzung II

MM 31.33: Poster

Mittwoch, 16. März 2011, 17:15–18:45, P5

Influence of the preparation technique on the temperature induced phase separation and nanocrystal formation in Si_xGe_yO_z — •Alexander Nyrow¹, Alexander Schwamberger¹, Christoph J. Sahle¹, Christian Sternemann¹, Achim Hohl², Patrick Degen³, and Metin Tolan¹ — ¹Fakultät Physik/DELTA, Experimentelle Physik Ia, Technische Universität Dortmund, Otto-Hahn-Str. 4, 44227 Dortmund, Germany — ²Institute for Materials Science, Technische Universität Darmstadt, Petersenstr. 23, 64287 Darmstadt, Germany — ³Physikalische Chemie II, Technische Universität Dortmund, Otto-Hahn-Str. 6, 44227 Dortmund, Germany

Since the discovery of visible luminescence from nanocrystallized Si in the early 90s, the study of group IV semiconductor/oxygen systems has received great attention. Due to their unique electronic properties Ge and Si nanocrystals (NCs) are promising candidates for, e.g., light emitting diodes or fast and stable non-volatile flash memory devices. Despite the intensive research regarding the electrical and optical properties of nanoparticles embedded in oxide matrices, spectroscopic studies of its formation process are rare. The NC formation is induced by thermal annealing of the amorphous precursors. It is already known that the composition and the local structure of Si_xGe_yO_z and thus the phase separation essentially depend on the preparation process. To investigate the influence of the preparation technique on the NC formation, samples with various Si/Ge ratios were prepared by evaporation of GeO₂ and Si and by thermal processing of polymers derived from phenyl trichlorogermane and phenyl trichlorosilane, respectively.