Dresden 2011 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
MM: Fachverband Metall- und Materialphysik
MM 34: Nanomaterials I
MM 34.8: Vortrag
Donnerstag, 17. März 2011, 12:45–13:00, IFW B
Electrical properties of an Al-NWFET fabricated under different gate oxide layers — •Dawit Gedamu1, Torge Behrendt1, Hermann Kohlstedt2, Ondrej Vavra2, Adrian Petraru2, and Rainer Adelung1 — 1Functional Nanomaterials, Institute of Materials Science, Faculty of Engineering, University of Kiel, Kaiser Strasse 2, 24143 Kiel, Germany — 2Nanoelektronik, Technische Fakultät Kiel, Christian-Albrechts-Universität Kiel, 24143 Kiel , Germany
Recently 1 D nanostructures such as nanowires (NWs) becoming gradually more important as components for micro- and nanoelectronic devices because of their high surface to volume ratio [MRS Bulletin 32, 99 (2007), Acc. Chem. Res. 32, 435 (1999)]. Nonetheless, the development of 1D NWs with desired thicknesses on preferred substrates or between two metal contacts as well as their understanding their physical properties, are the still challenging. Several methods have been utilized so far to grow 1D NWs but according to industrial demand, we have used thin film fracture [Nat. Mater. 3, 375 (2004)] as NW templates and electron beam lithography techniques to fabricate Al NW field effect transistors (NWFETs). The fabrication of Aluminum NWFETs with dimensions in the sub-100 nm regime and the electrical characteristics of bottom gate FETs will be presented. An 100 nm thick silicon dioxide on 380 micron thick <100> oriented p-doped silicon was used gate oxide. In another approach, Alumina film synthesized through electrochemical oxidation on silicate glass substrate was used to as gate dielectric. A close analysis of the NWFETs reveals a slight drop down of the conductance with increasing gate voltage.