Dresden 2011 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

O: Fachverband Oberflächenphysik

O 20: Solid / liquid interfaces II

O 20.5: Vortrag

Montag, 14. März 2011, 18:15–18:30, WIL B321

In situ Diffraction Studies of Homoepitaxial Growth of Cu(001) from Aqueous Electrolyte — •Frederik Golks^1,2, Yvonne Gründer², Jochim Stettner², Klaus Krug², Jörg Zegenhagen¹, and Olaf M. Magnussen² — ¹European Synchrotron Radiation Facility, Grenoble, France — ²Universität Kiel, Institut für Experimentelle und Angewandte Physik, Kiel, Germany

Motivated by the pivotal role of copper electroplating in the production of interconnects for ULSI microelectronics, we have studied the homoepitaxial growth of Cu(001) in aqueous electrolytes containing 1 mM chloride and 1 or 5 mM Cu²⁺ by in-situ surface x-ray diffraction with high time resolution. Although diffusion-limited layer-by-layer growth is observed over a wide potential regime, a pronounced mutual interdependence of the interface structure and the growth behavior is found. Thus, the tendency towards surface roughening is increased in the presence of a complete c(2x2) Cl⁻ adlayer [1] while the ordering of the Cl⁻ adlayer is slowed down during Cu deposition. Furthermore, the presence of polyethylene glycol (PEG), a commonly used inhibitor in industry, results in significantly lower microscopic growth rates and an increased tendency towards 3D growth.

[1] Y. Gründer, D. Kaminski, F. Golks, K. Krug, J. Stettner, O. M. Magnussen, A. Franke, J. Stremme, E. Pehlke, Phys. Rev. B 81, 17 (2010)