Dresden 2011 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 36: Poster Session II (Metals; Nanostructures at surfaces; Surface or interface magnetism; Spin-Orbit Interaction at Surfaces; Electron and spin dynamics; Surface dynamics; Methods; Theory and computation of electronic structure)
O 36.49: Poster
Dienstag, 15. März 2011, 18:30–22:00, P4
Epitaxial growth of hexagonal boron nitride monolayers by a three-step boration-oxidation-nitration process — •Frank Müller1, Stefan Hüfner1, Samuel Grandthyll1, Hermann Sachdev2, Stefan Gsell3, and Matthias Schreck3 — 1Department of Experimental Physics, Saarland University, D-66041 Saarbrücken, Germany — 2Inorganic Chemistry, Saarland University, D-66041 Saarbrücken, Germany — 3Institute of Physics, University of Augsburg, 86135 Augsburg, Germany
The formation of well-ordered monolayers of hexagonal boron nitride on the surface of a Rh/YSZ/Si(111) multilayer substrate via a three-step boration-oxidation-nitration process was investigated by X-ray photoelectron spectroscopy (XPS), X-ray photoelectron diffraction (XPD) and low-energy electron diffraction (LEED). The chemical vapor deposition (CVD) of trimethylborate (BOCH3)3 results in a selective decomposition of the precursor leading to a dilute distribution of boron within the interstitials of the Rh lattice. After oxidation, the layer of a boron oxygen species of about 1 nm thickness can be transformed into a hexagonal monolayer of BN by annealing in an appropriate NH3 atmosphere. The results of the present study clearly show that the formation of BN monolayers is also possible when boron and nitrogen are provided successively from separate sources. This procedure represents an alternative routine for the preparation of well-ordered BN monolayers, which benefits from a strong reduction of hazardous potential and economic costs compared to the use of borazine as the current standard precursor. Phys. Rev. B 82, 075405 (2010)