Dresden 2011 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 44: Nanostructures at surfaces: Dots, particles, clusters, arrays III

O 44.3: Vortrag

Mittwoch, 16. März 2011, 11:45–12:00, WIL C107

Fabrication and Characterization of Well-Aligned Zinc Oxide Nanowire Arrays and their realizations in Schottky-Device Applications — •Kin Mun Wong¹, Liaoyong Wen², Yaoguo Fang², Fabian Grote¹, Hui Sun¹, and Yong Lei¹ — ¹Institute of Materials Physics and Center for Nanotechnology, University of Muenster — ²Institute of Nanochemistry and Nanobiology, Shanghai University, Shanghai 201800, China

Highly ordered arrays of vertical zinc oxide (ZnO) nanowires (NWs) or nanopores were fabricated in our group by first thermal evaporating a thin film of gold on the ultrathin alumina membrane (UTAM). The UTAM was then utilized as a substrate for the growth of the ordered arrays using a chemical vapour deposition (CVD) process. Alternatively, a modified CVD process was also used to fabricate ultra-long ZnO NWs with the length of the nanowire exceeding 100 micrometres. Subsequently, densely packed arrays of ZnO NWs Schottky diodes were synthesized by transferring the long NWs on a substrate using a dry contact printing method and the electrical contacts were made on the NWs with a photolithographic process. The interesting electrical properties of the ZnO NWs, diodes or other metal oxide NWs such as the field emission, electron transport and piezoelectric properties were characterized by current-voltage or by other appropriate measurements.

1. L. Y. Wen, Z. Z. Shao, Y. G. Fang, K. M. Wong, Y. Lei, L. F. Bian, and G. Wilde, Appl. Phys. Lett. 97, 053106 (2010).