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O: Fachverband Oberflächenphysik
O 60: Poster Session IV (Solid/liquid interfaces; Semiconductors; Oxides and insulators; Graphene; Plasmonics and nanooptics; Electronic Structure; Surface chemical reactions; Heterogeneous catalysis)
O 60.103: Poster
Wednesday, March 16, 2011, 17:30–21:00, P4
The plasma treatment of Titanium in Oxygen, Nitrogen, Argon and air studied with MIES, UPS and XPS — •René Gustus1, Sebastian Dahle1, and Wolfgang Maus-Friedrichs1,2 — 1Institut für Physik und Physikalische Technologien, TU Clausthal, Leibnizstr. 4, 38678 Clausthal-Zellerfeld, Germany — 2Clausthaler Zentrum für Materialtechnik, TU Clausthal, Leibnizstr. 4, 38678 Clausthal-Zellerfeld, Germany
The treatment of Titanium with different kinds of plasma is commonly used for etching, oxidation, carbonization or nitriding. During some of these techniques, a lot of heat is carried into the material, whereas others operate at room temperature. All of the processes reported so far have in common that cover gas is needed. The gas is choosen in terms of application, thus Nitrogen-rich or Carbon-rich gases are utilized for hardening and pure Argon as inert gas. It is also reported that an Oxygen plasma can be used for the removal of a TiN film.
We investigated the reaction and etching rates of an Oxygen and a Nitrogen dielectric barrier discharge (DBD) plasma and opposed both in an air plasma. The etching depth and surface purgation in an air plasma is then compared to an Argon plasma, to determine the use of an air plasma for technical applications. For our studies, we employed Metastable Induced Electron Spectroscopy (MIES), Ultraviolet Photoelectron Spectroscopy (UPS), and X-ray Photoelectron Spectroscopy (XPS).