Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
O: Fachverband Oberflächenphysik
O 60: Poster Session IV (Solid/liquid interfaces; Semiconductors; Oxides and insulators; Graphene; Plasmonics and nanooptics; Electronic Structure; Surface chemical reactions; Heterogeneous catalysis)
O 60.17: Poster
Mittwoch, 16. März 2011, 17:30–21:00, P4
Cs activated C58 → C60 conversion in thin films — Seyithan Ulas, Dmitry Strelnikov, Daniel Löffler, Patrick Weis, •Artur Böttcher, and Manfred M. Kappes — Karlsruher Institut für Technologie, Institut für Physikalische Chemie, Fritz-Haber-Weg 2, 76131 Karlsruhe, Germany
Thin monodisperse films consisting of non-IPR C58 fullerene cages have been deposited onto HOPG by exploiting the soft-landing of mass-selected C58+ ions. The ions have been created by performing the electron-impact induced fragmentation/ionization of IPR C60 cages. In analogy to IPR fullerenes the doping of the C58 films by alkali metals (e.g. Cs) leads to the formation of alkali-metal-based fullerides. The mass spectra taken during the sublimation of CsxC58 phase reveal well distinguishable three components, C56, C58 and C60. Both new components, C56 and C58, indicate the transfer of the C2 unit from a C58 to the adjacent one, C58 + C58 → C56 + C60 as a process competing with the breakage of the intercage bonds constituted by non-IPR sites (e.g. 2AP-2AP). The doping Cs atoms located in vicinity of the intercage bonds weaken them significantly and consequently facilitate the high-temperature C2 transfer. The yield of the C58 → C60 conversion depends on the doping degree x and reaches a level of 10−2 per C58 deposited.