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O: Fachverband Oberflächenphysik

O 60: Poster Session IV (Solid/liquid interfaces; Semiconductors; Oxides and insulators; Graphene; Plasmonics and nanooptics; Electronic Structure; Surface chemical reactions; Heterogeneous catalysis)

O 60.35: Poster

Wednesday, March 16, 2011, 17:30–21:00, P4

Photoelectron spectroscpoy of ultrathin epitaxial rare earth oxides on silicon — •Dominik Schwendt and Hans Jörg Osten — Institut für Materialien und Bauelemente der Elektronik, Leibniz Universität Hannover, Hannover, Deutschland

Thin crystalline rare earth oxide layers are a promising candidate as future high-k materials replacing silicon dioxide in various MOS applications. In order to integrate these new materials into CMOS technology, a good knowledge of the silicon - oxide interface and growth behaviour of the rare earth oxides is mandatory. Epitaxial growth not only avoids recrystallization during post-growth annealing steps but also provides good interface engineering options.

Here, we present an in situ study of the molecular beam epitaxy of rare earth oxides on silicon substrates. The growth process was monitored using reflection high-energy electron diffraction. Photoelectron spectroscopic measurements of the layers were taken at different growth stages showing the change of the electronic state of the oxide. Thus we can estimate the way the oxide layer is bound to the silicon and also draw conclusions on the successful suppression on interfacial layers.