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O: Fachverband Oberflächenphysik

O 60: Poster Session IV (Solid/liquid interfaces; Semiconductors; Oxides and insulators; Graphene; Plasmonics and nanooptics; Electronic Structure; Surface chemical reactions; Heterogeneous catalysis)

O 60.4: Poster

Wednesday, March 16, 2011, 17:30–21:00, P4

Tunneling Current Driven Electrodeposition of Metals onto n-Si(111):H — •Sebastian Jakob and Werner Schindler — Physikdepartment, Lehrstuhl E20, Technische Universität München, James-Franck-Straße, D-85748 Garching bei München

Electrochemical (EC) metal deposition onto Silicon surfaces should be impossible at potentials of the n-Si(111):H electrode lying above the flatband potential due to the electron depletion at the Silicon suface. Here, we show in sophisticated in-situ EC-STM experiments in great detail that electrodeposition onto n-Si(111):H occurs at potentials positive with respect to the flatband potential, although obviously not found in conventional STM experiments at the solid/ liquid interface. By STM imaging and in high-resolution cyclic voltammetry we observe a deposition/ dissolution of metal, determined by the corresponding Nernst potential of the metal. We explain this behaviour by electrodeposition originating from tunneling currents through the electron depletion zone at the n-Si(111):H surface.