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O: Fachverband Oberflächenphysik
O 60: Poster Session IV (Solid/liquid interfaces; Semiconductors; Oxides and insulators; Graphene; Plasmonics and nanooptics; Electronic Structure; Surface chemical reactions; Heterogeneous catalysis)
O 60.47: Poster
Wednesday, March 16, 2011, 17:30–21:00, P4
Electronic and structural properties of hydrogen-intercalated monolayer graphene on SiC(0001) — •Stiven Forti1, Camilla Coletti1, Konstantin Emtsev1, Dong Su Lee1, Alexei Zakharov2, Jurgen H. Smet1, and Ulrich Starke1 — 1Max-Planck-Institute for Solid State Research, Heisebergstr. 1, 70569 Stuttgart, Germany — 2MAX-lab, Lund University, Lund, S-22100, Sweden
The growth of epitaxial graphene on SiC is one of the most promising techniques to provide large area, homogeneous graphene. In this work we demonstrate the possibility to combine the growth of epitaxial graphene under Ar atmosphere [1] with the capability of decoupling the carbon interface layer from the substrate by means of hydrogen intercalation [2] to obtain large area, homogeneous, free standing and undoped graphene on top of SiC(0001). The quality of the graphene samples is demonstrated by a variety of surface science experiments. AFM shows a morphology with regular steps and large terraces. Low defect concentration is revealed by Raman spectroscopy. LEEM highlights the homogeneity of the electronic structure on a micrometer scale with nanometer resolution. High-resolution ARPES shows extremely sharp bands with the dispersion of a free-standing monolayer graphene, confirming the good quality of the graphene obtained via this process and therefore demonstrating the effective decoupling of the carbon layer from the SiC substrate. [1] K.V. Emtsev et al., Nat. Mat. 8, 203(2009), [2] C. Riedl et al., PRL 103, 246804(2009).