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O: Fachverband Oberflächenphysik
O 60: Poster Session IV (Solid/liquid interfaces; Semiconductors; Oxides and insulators; Graphene; Plasmonics and nanooptics; Electronic Structure; Surface chemical reactions; Heterogeneous catalysis)
O 60.55: Poster
Mittwoch, 16. März 2011, 17:30–21:00, P4
Intrinsic Voltage Rectification in a Graphene Nano Device — •Robert Göckeritz1, Jörg Pezoldt1, and Frank Schwierz2 — 1FG Nanotechnology, Institute for Micro- and Nanotechnology, Ilmenau University of Technology, PF 100565, 98684 Ilmenau, Germany — 2FG Solid State Electronics, Institute for Micro- and Nanotechnology, Ilmenau University of Technology, PF 100565, 98684 Ilmenau, Germany
Recently, voltage rectification effects at GHz frequencies have been observed in three-terminal junctions (TTJ) based on III-V heterojunctions. In the present work, such effects at DC voltages are reported for the first time in TTJs made of epitaxially grown graphene. Most notably, our T-shaped TTJ devices show a pronounced rectification behavior already at room temperature.
The graphene was grown on SiC using a high temperature process at 1800°C under atmospheric pressure applying a carbon capping technique prior to growth. The 50 nm wide and 500 nm long graphene devices were patterned by electron beam lithography. Raman spectroscopy revealed the fingerprint of graphene and AFM, XPS and electrical measurements have been performed.
The reported room-temperature rectification in graphene TTJs may pave the way for new applications of graphene in electronics.