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O: Fachverband Oberflächenphysik

O 60: Poster Session IV (Solid/liquid interfaces; Semiconductors; Oxides and insulators; Graphene; Plasmonics and nanooptics; Electronic Structure; Surface chemical reactions; Heterogeneous catalysis)

O 60.56: Poster

Mittwoch, 16. März 2011, 17:30–21:00, P4

Raman spectroscopy of quasi-freestanding monolayer graphene — •Felix Fromm, Florian Speck, Martin Hundhausen, and Thomas Seyller — Universität Erlangen-Nürnberg, Lehrstuhl für Technische Physik, 91058 Erlangen, Germany

The epitaxial growth of graphene on silicon carbide (SiC) by thermal sublimation of silicon in an argon atmosphere is a promising method to produce high quality graphene layers. We focus here on the mechanical properties of graphene samples produced by converting the (6√3×6√3)R30^∘ reconstructed surface into a quasi-freestanding graphene monolayer on hydrogen terminated SiC. Raman spectroscopy of graphene is well suited to determine mechanical strain by measuring the frequency shifts of phonon modes. We evaluate the strain from the shift of the 2D peak in the Raman spectrum. Intercalation of the (6√3×6√3)R30^∘ surface reconstruction at 550^∘C results in tensile strained graphene. The size of strain however is reduced with prolonged intercalation time. After intercalation at higher temperature the obtained graphene layers show much smaller tensile strain.