Dresden 2011 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 77: Graphene V
O 77.1: Vortrag
Donnerstag, 17. März 2011, 15:00–15:15, WIL B321
Large area quasi-free standing two to four layer graphene on SiC(0001) — •Camilla Coletti1, Stiven Forti1, Konstantin V. Emtsev1, Kevin M. Daniels2, Biplob K. Daas2, MVS Chandrashekhar2, Alexei A. Zakharov3, and Ulrich Starke1 — 1Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-70569 Stuttgart, Germany — 2University of South Carolina, 301 S. Main St, Columbia, SC 29208, USA — 3MAX-lab, Lund University, Lund, S-22100, Sweden
Graphene epitaxially grown on SiC substrates is an appealing candidate for a wide variety of electronic applications, provided that large area, charge neutral layers can be produced. We have recently reported that hydrogen intercalation can be used to obtain technologically promising undoped quasi-free standing monolayer graphene [1]. In this work we demonstrate that by intercalating hydrogen we can also obtain large-area undoped quasi-free standing bi-, tri- and tetralayer graphene on SiC(0001). LEEM analysis shows that the thickness of the quasi-free standing graphene is homogenous on a scale of tens of micrometers. High resolution ARPES provides evidence that intercalated graphene can reach, upon UHV annealing, charge neutrality within a few meV. Furthermore, this work devotes particular attention to the electronic and structural properties of quasi-free standing trilayer graphene. A combined evaluation of ARPES and LEEM data allows us to shine light on the trilayer stacking sequence, whose determination and control are necessary for advances in graphene-based electronics. [1] C.Riedl et al., Phys. Rev. Lett. 103, 246804 (2009)