Dresden 2011 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
O: Fachverband Oberflächenphysik
O 80: Epitaxy and growth: Metals and semiconductors I
O 80.1: Vortrag
Donnerstag, 17. März 2011, 15:00–15:15, WIL C307
Strain aspects of the atomic structure of the InAs wetting layer grown on GaAs(001)-c(4×4) — •Christopher Prohl, Jan Grabowski, Britta Höpfner, Mario Dähne, and Holger Eisele — Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin
InAs/GaAs is the model system for III-V-semiconductor quantum dots and is also a well-known example for the Stranski-Krastanow growth mode in epitaxy. As shown before by scanning tunneling microscopy (STM) investigations of molecular beam epitaxy (MBE) grown samples, the InAs wetting layer evolution on GaAs(001)-c(4×4) can be separated into three phases before quantum dot occurrence: signatures of InAs on GaAs-c(4×4) for low coverages, an In2/3Ga1/3As-(4×3) reconstructed monolayer at about 0.67 ML, and different InAs-(2×4) reconstructions forming on top of the latter. In this talk, a closer look at the surface strain of the identified atomic surface structures will be taken. The strain situation of the different growth regimes will be discussed in detail. For this purpose, mainly the bond lengths defining the stress situation will be considered.
The authors thank K. Jacobi and the MPG for providing the experimental set-up. This work was supported by project Da 408/12 of the DFG.