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Dresden 2011 – scientific programme

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O: Fachverband Oberflächenphysik

O 80: Epitaxy and growth: Metals and semiconductors I

Thursday, March 17, 2011, 15:00–17:00, WIL C307

15:00 O 80.1 Strain aspects of the atomic structure of the InAs wetting layer grown on GaAs(001)-c(4×4) — •Christopher Prohl, Jan Grabowski, Britta Höpfner, Mario Dähne, and Holger Eisele
15:15 O 80.2 Anion-enhanced self-diffusion on Au(100) — •Mostafa Mesgar, Payam Kaghazchi, and Timo Jacob
15:30 O 80.3 Growth of atomically flat Zn films on ZnO(0001) surface — •Hao Zheng, Natalia Schneider, and Richard Berndt
15:45 O 80.4 The Interaction of Copper with a Rhenium(1010) Surface — •Daniel Przyrembel and Klaus Christmann
16:00 O 80.5 Initial stages of the ion-beam assisted epitaxial GaN film growth on 6H-SiC(0001) — •Lena Neumann, Jürgen Gerlach, Thomas Höche, and Bernd Rauschenbach
16:15 O 80.6 AES/LEED/I(V) LEED investigation of ultrathin Pb and In layers deposited on Ni(001) and Ni(111) faces — •Katarzyna Miśków and Aleksander Krupski
16:30 O 80.7 (contribution withdrawn) Epitaxial growth of Group IV materials by Chemical Vapor Deposition for Germanium Metal Oxide Semiconductor devices — •Benjamin Vincent, Roger Loo, and Matty Caymax
16:45 O 80.8 Ab-initio study on the temperature dependence of adsorbate-induced segregation in C/Pt25Rh75(100) — •Tobias C. Kerscher and Stefan Müller
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