Dresden 2011 – wissenschaftliches Programm
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Q: Fachverband Quantenoptik und Photonik
Q 16: Solid State Photon Sources
Q 16.9: Vortrag
Dienstag, 15. März 2011, 12:45–13:00, HSZ 02
Tunnel Injection in Electrically Pumped Single Photon Emitters — •Alexander Dreismann1, Murat Öztürk1, Ole Hitzemann1, Erik Stock1, Waldemar Unrau1, Askhat K. Bakarov2, Aleksandr I. Toropov2, Ilia A. Derebezov2, Vladimir Haisler2, and Dieter Bimberg1 — 1Institut für Festkörperphysik, TU-Berlin, 10623 Berlin, Germany — 2Institute of Semiconductor Physics, 630090 Novosibirsk, Russia
Electrically pumped InGaAs/GaAs quantum dot (QD) based Resonant-Cavity LEDs (RC-LEDs) represent powerful semiconductor based single photon and potential entangled photon emitters with high out-coupling efficiencies as required for quantum key distribution [1]. To achieve high photon emission rates the exciton luminescence intensity should be as high as possible; in the case of entangled photon sources exciton and biexciton luminescence intensities should be comparable.
To optimize the operation of our RC-LED in this regard we investigate the dependence of the luminescence intensity on the applied bias as well as on the temperature. We observe resonant tunneling injection of charge carriers into the QDs before the flat band condition of the diode structure is reached [2]. The influence of the dark state of the exciton on the luminescence is studied by comparing experimental data with a rate equation model. This work was partly funded by the SFB 787.
[1] D. Bimberg et. al., IEEE Photonics Journal, 1, 58 (2009)
[2] A. Baumgartner et. al., Phys. Rev. Lett. accepted (2010)