Dresden 2011 – wissenschaftliches Programm
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Q: Fachverband Quantenoptik und Photonik
Q 8: Photonics 1
Q 8.6: Vortrag
Montag, 14. März 2011, 11:45–12:00, SCH A215
Observation of spontaneous Raman scattering in 220nm Silicon-on-Insulator (SOI) waveguides — •Shaimaa Mahdi1, Sha Wang1, Aws Al-Saadi1, Bülent A. Franke1, Viktor Lisinetskii2, Sigurd Schrader2, Stefan Meister1, and Hans J. Eichler1 — 1Technische Unuversität Berlin, Institut für Optik und Atomare Physik, Berlin, Germany — 2Technische Hochschule Wildau (FH), Institut für Plasma- und Lasertechnik, Wildau, Germany
The prospect of silicon acting as an active optical material with the possibility of amplification and lasing has been the driving force behind the research of Raman scattering in Silicon-on-Insulator (SOI) waveguides. We report the observation of spontaneous Raman scattering in 220nm SOI strip waveguides with a width of 2µm and a length of 2cm. Raman scattering was investigated for two different pump wavelengths at 1341nm and 1455nm. The coupling efficiency was estimated to be about 10%. The spontaneous Raman spectrum was measured by an optical spectrum analyzer. The first order Raman peak was measured at about 1441.4nm by using a pump wavelength of 1341nm, which corresponds to a Raman shift of 15.6THz. The FWHM of the Raman peak was about 100GHz. Maximum Raman output of 90pW at 1441.4nm was obtained with a pump power of 22mW. Also the polarization dependency of the pump source was studied. Laser-induced damage threshold of the silicon waveguide facets is critical, therefore the facet preparation is important. A new method of preparation of silicon waveguides will be presented using fs laser pulses at 800nm with a repetition rate of 1kHz.