Dresden 2011 – scientific programme
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TT: Fachverband Tiefe Temperaturen
TT 1: TR: Graphene 1 (jointly with MA, HL, and DY)
TT 1.2: Talk
Monday, March 14, 2011, 11:00–11:15, HSZ 03
Electron transport and spins in graphene — •Jan Bundesmann1, Michael Wimmer2, and Klaus Richter1 — 1Institut für theoretische Physik, Universität Regensburg, Deutschland — 2Instituut-Lorentz, TU Leiden, The Netherlands
The weak atomic spin-orbit interaction (SOI) in graphene leads to the assumption of large spin relaxation times. Simulations, taking into account spin-scattering from charged impurities in the substrate, yielded spin relaxation times [1] much larger than spin injection experiments in graphene [2,3].
Still assuming that the model of spins scattered at charged impurities is correct, we implemented a tight-binding model for graphene in the presence of SOI.
In our work the focus lies on the effects of SOI on electron transport (i.e. low energy excitations and the role of symmetry classes manifested, e.g., in weak localization) as well as its influence on spin transport in the diffusive regime.
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Tombros, Josza, Popinciuc, Jonkman and van Wees, Nature 448, 571 (2007)
Han, Pi, McCreary, Li, Wong, Swartz and Kawakami, Phys. Rev. Lett. 105, 167202 (2010)