Dresden 2011 – scientific programme
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TT: Fachverband Tiefe Temperaturen
TT 15: SC: Fabrication and Characterization
TT 15.5: Talk
Monday, March 14, 2011, 17:30–17:45, HSZ 301
Gallium nanolayers featuring on-chip superconductivity in silicon — •Richard Skrotzki1, Thomas Herrmannsdörfer1, Jan Fiedler1,2, Viton Heera1, Matthias Voelskow1, Arndt Mücklich1, Bernd Schmidt1, Wolfgang Skorupa1, Gerhard Gobsch2, Manfred Helm1, and Joachim Wosnitza1 — 1Dresden High Magnetic Field Laboratory (HLD) and Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), P.O. Box 51 01 19, D-01314 Dresden, Germany — 2Experimental Physics, Institute of Physics, Ilmenau University of Technology, Weimarer Str. 32, 98693 Ilmenau, Germany
We demonstrate the feasibility of embedding superconducting Ga nanolayers in commercial (100) oriented silicon wafers and discuss the possibility of potential device applications [1]. Ion implantation and rapid thermal annealing, known as versatile tools of microelectronic technology, have been used for inserting and distributing a gallium dose of up to
4 × 1016 cm−2. As proven by structural analysis, a 10 nm thin layer of amorphous Ga-rich precipitates forms during annealing at 600 - 700∘C. These structures exhibit a superconducting transition at 7 K. Extended resistivity and magnetization measurements reveal in-plane critical fields around 14 T and critical current densities exceeding 2 kA/cm2. In summary, we proceed with an optimistic outlook concerning the implementation of prospective microstructuring. After all, this would be the next step towards the development of novel semiconductor-based superconducting devices.
R. Skrotzki et al., Appl. Phys. Lett. 97, 192505 (2010)