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Dresden 2011 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 15: SC: Fabrication and Characterization

TT 15.6: Vortrag

Montag, 14. März 2011, 17:45–18:00, HSZ 301

Structural characterization of buried superconducting Ga rich films in Si — •Jan Fiedler1,2, Viton Heera1, Richard Skrotzki1, Thomas Herrmannsdörfer1, Matthias Voelskow1, Arndt Mücklich1, Bernd Schmidt1, Wolfgang Skorupa1, Gerhard Gobsch2, Manfred Helm1, and Jochen Wosnitza11Institute of Ion Beam Physics and Materials Research and Dresden High Magnetic Field Laboratory (HLD), Helmholtz-Zentrum Dresden-Rossendorf (HZDR), P.O. Box 51 01 19, D-01314 Dresden, Germany — 2Experimental Physics, Institute of Physics, Ilmenau University of Technology, Weimarer Str. 32, 98693 Ilmenau, Germany

Recently it has been shown that heavily p-doped group-IV semiconductors such as diamond, silicon and germanium can become superconducting at low temperatures. Here, we present a study of Ga-implanted Si that becomes superconducting due to precipitation after annealing. Ion implantation allows introducing a high Ga dose (4E16cm-2) in Si that leads to peak concentrations far beyond the solid solubility limit. Rapid thermal annealing (RTA) causes redistribution of the Ga and re-crystallization of the amorphous implanted Si layer. After annealing at temperatures up to 850°C the implanted layers are polycrystalline and contain Ga-rich precipitates. Structural investigations by means of RBS/C measurements and TEM demonstrate a high density of precipitates at the interface of a protective SiO2 layer and the silicon substrate. At optimized annealing conditions (600-700°C) such samples become superconducting with critical temperatures up to 7 K [1]. [1] Skrotzki R. et al. , Appl. Phys. Lett. 97 (2010) 192505

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