Dresden 2011 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 33: CE: Metal-Insulator Transition 1
TT 33.1: Vortrag
Mittwoch, 16. März 2011, 10:30–10:45, HSZ 105
A Microscopic View on the Mott transition in Cr-doped V2O3 — •Nicolaus Parragh1, Stefano Lupi2, Leonetta Baldassare3, Daniele Nicoletti4, Marino Marsi5, Philipp Hansmann1, Alessandro Toschi1, Tanusri Saha-Dasgupta6, Ole-Krogh Andersen7, Giorgio Sangiovanni1, and Karsten Held1 — 1Institute of Solid State Physics, Vienna University of Technology, 1040 Vienna, Austria — 2CNR-IOM and Universita’ di Roma "La Sapienza", Italy — 3Sincrotrone Trieste, Italy — 4Universita’ di Roma "La Sapienza" Italy — 5Laboratoire de Physique des Solides, CNRS-UMR 8502, Orsay, France — 6S.N.Bose Center for Basic Sciences, Kolkata, India — 7Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany
The metal-insulator transition in Chromium-doped Vanadium Sesquioxide has recieved much attention since its discovery in 1969. After several attempts for describing it in the framework of single-band Hubbard models some key experiments reveiled the intimate multi-band nature of this material. Here I will present the results of a recent experiment combining Infrared (IR), Scanning Photoemission Microscopy (SPEM) and X-ray Diffraction (XRD) and local density approximation + dynamical mean field theory (LDA+DMFT) calculations showing for the first time that microscopic islands characterized by bad metallic behaviour form close to the first-order transition. The bad metallicity is only partially reduced by applying pressure, pointing to a non-trivial interplay between the orbital degrees of freedom [1].
Nature Communications 1, 105 (2010)