Dresden 2011 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 40: Topological Insulators (jointly with HL, MA)
TT 40.7: Vortrag
Mittwoch, 16. März 2011, 18:15–18:30, HSZ 04
Electronic structure of the topological semiconductors PtYSb, PtLaBi, and PtGdBi explored by hard X-ray photoelectron spectroscopy. — •Siham Ouardi1, Shekar Shandra1, Gerhard H. Fecher1, S. Chadov1, X. Kozina1, G. Stryganyuk1, C. Felser1, S. Ueda2, and K. Kobayashi2 — 1Institut für Anorganische und Analytische Chemie, Johannes Gutenberg Universtität, 55099 Mainz — 2National Institute for Materials Science, SPring-8, Hyogo, Japan
One of the recent topics in spintronics is the realization of the so-called topological insulators, that are insulators in the bulk and gapless semiconductors at the surface. Besides the well-known wide range of properties of the Heusler family it was recently shown that many of the heavy Heusler semiconductors with 1:1:1 composition and C1b structure are zero band-gap insulators and exhibit a inverted band structure. The density of states of several compounds was investigated by bulk sensitive hard X-ray photoelectron spectroscopy. First experimental results on PtYSb, PtLaBi, and PtGdBi give clear evidence for the zero band-gap state. Their structural, spectral and transport characteristics will be compared to calculations.