Dresden 2011 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 44: Poster Session Correlated Electrons

TT 44.26: Poster

Thursday, March 17, 2011, 10:00–13:00, P1

Low-temperature electrical resistivity of Yb(Rh_0.95Fe_0.05)₂Si₂ — •Maik Schubert, H.S. Jeevan, Yoshi Tokiwa, and Philipp Gegenwart — I. Physik. Institut, Georg-August Universität Göttingen, Friedrich-Hund Platz 1, 37077 Göttingen, Germany

We report measurements of the electrical resistivity ρ(T,B) on a single crystal of Yb(Rh_0.95Fe_0.05)₂Si₂ at temperatures down to 15 mK and in magnetic fields up to 2 T. The Fe-doping has a threefold effect: (i) an increase of the residual resistivity similar as found for respective Co or Ir doping, (ii) a decrease of the Kondo temperature due to the chemical pressure effect, like it has been found for the respective Co doping, and (iii) a slight shift of the Fermi energy corresponding to the doping of 0.1 holes per unit cell. This latter effect suppresses the antiferromagnetic ordering despite the expected increase of T_N due to chemical pressure. Furthermore, we observe a moderate shift of the energy scale T^∗(B) with B^∗(T→ 0)=0.03 T. At lowest temperatures, the electrical resistivity follows Fermi liquid behavior Δρ=A(B)T² both above and below 0.03 T with a divergence of the coefficient A upon approaching the critical field from both sides.

Work supported by the DFG through SFB 602 and research unit 960 (Quantum phase transitions).