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TT: Fachverband Tiefe Temperaturen
TT 51: TR: Nanoelectronics I - Quantum Dots, Wires, Point Contacts 2
TT 51.5: Talk
Thursday, March 17, 2011, 15:00–15:15, HSZ 304
Defect-Induced Electron Scattering in Single-Walled Carbon Nanotubes — •Dario Bercioux1,2, Gilles Buchs3, Hermann Grabert1,2, and Oliver Groening4 — 1Freiburg Institute for Advanced Studies, Albert-Ludwigs-Universität, D-79104 Freiburg, Germany — 2Physikalisches Institut, Albert-Ludwigs-Universitat, D-79104 Freiburg, Germany — 3Kavli Institute of Nanoscience, TU-Delft, P.O. Box 5046, 2600 GA Delft, The Netherlands — 4EMPA Swiss Federal Laboratories for Materials Testing and Research, nanotech@surfaces, Feuerwerkerstr. 39, CH-3602 Thun, Switzerland
We present a detailed comparison between theoretical predictions on electron scattering processes in metallic single-walled carbon nanotubes with defects and experimental data obtained by scanning tunneling spectroscopy of Ar+ irradiated nanotubes [1,2]. To this purpose we first develop a formalism for studying quantum transport properties of defected nanotubes in presence of source and drain contacts and an STM tip. The formalism is based on a field theoretical approach describing low-energy electrons. We account for the lack of translational invariance induced by defects within the so called extended k·p approximation. The theoretical model reproduces the features of the particle-in-a-box-like states observed experimentally. Further, the comparison between theoretical and experimental Fourier-transformed local density of state maps yields clear signatures for inter- and intra-valley electron scattering processes depending on the tube chirality.
[1] D. Bercioux et al., arXiv:1011.1423.
[2] G. Buchs et al., Phys. Rev. Lett. 102, 245505 (2009).