Karlsruhe 2011 – wissenschaftliches Programm
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T: Fachverband Teilchenphysik
T 61: Halbleiterdetektoren I
T 61.2: Vortrag
Montag, 28. März 2011, 17:00–17:15, 30.21: 001
Electrical Simulation of a DEPFET Pixel Matrix — •Christian Koffmane1, Hans-Günther Moser1, Jelena Ninkovic1, Rainer Richter1, Andreas Wassatsch1, and on behalf of the DEPFET-Collaboration2 — 1Max-Planck-Institut für Physik, München — 2International
The Belle II experiment will use two layers of pixel detectors to achieve a good vertex resolution. The two layers will consist of 40 pixel sensors each with roughly 190.000 DEPFET pixels to provide the necessary spatial resolution. In addition to the array of DEPFET pixels steering and read-out ASICs are bump bonded on the pixel sensor. The high luminosity of the Belle-II experiment requires a fast and parallel read-out. The pixel sensor will be read-out in rolling shutter-mode with a row read-out time of 100 ns and a frame time of 20 µs. To find design solutions which allow such short read-out times simulations and measurements of prototypes are performed. The electrical simulations incorporating the ASICs and DEPFET pixel array allow early investigations on the interaction between the chips and the pixel array e.g. the pixel output signal depending on the position of the pixel within the array. In the following a model describing the DEPFETs intrinsic properties like the MOS-FET characteristic, the internal amplification and the reset mechanism as well as parasitic resistive and capacitive elements is presented and simulation results will be discussed.