Karlsruhe 2011 – wissenschaftliches Programm
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T: Fachverband Teilchenphysik
T 61: Halbleiterdetektoren I
T 61.8: Vortrag
Montag, 28. März 2011, 18:30–18:45, 30.21: 001
Properties of the X-ray Induced Radiation Damage at the Silicondioxide-Silicon Interface — •Jiaguo Zhang1,2, Eckhart Fretwurst1, Robert Klanner1, Ajay Srivastava1, and Joern Schwandt1 — 1Institute for Experimental Physics, Hamburg University — 2Marie Curie initial training network - PArticle Detector (MC-PAD)
As preparation for the development of silicon pixel detectors for the harsh radiation environment at the European X-ray Free Electron Laser (XFEL), test structures, like CMOS capacitors and gate-controlled diodes, were irradiated up to 100 MGy at the DESY DORIS III synchrotron with 12 keV X-rays. Oxide charge densities and interface trap densities were determined as function of dose. A model was developed and used to describe the C-V and G-V curves of the CMOS capacitors, and the properties of discrete traps in the band gap were studied in detail with this model. A comparison between the Synopsys TCAD simulations and the model calculation was made in order to prove the validity of the model calculation.