Karlsruhe 2011 – wissenschaftliches Programm
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T: Fachverband Teilchenphysik
T 62: Halbleiterdetektoren II
T 62.6: Vortrag
Dienstag, 29. März 2011, 18:00–18:15, 30.21: 001
Silicon photomultipliers with bulk-integrated quenching resistor: first results of characterization — •Christian Jendrysik1, Ladislav Andriček1, Gerhard Liemann1, Gerhard Lutz2, Hans-Günther Moser1, Jelena Ninković1, and Rainer Richter1 — 1Max-Planck-Institut für Physik, Halbleiterlabor, München — 2PNSensor GmbH, München
For future experiments in high energy physics detectors with high photon detection efficiencies (PDE) and ability to work in high magnetic fields are in the focus of research. Silicon photomultipliers (SiPM), arrays of Geiger-mode avalanche photodiodes, tend to replace conventional photomultiplier tubes in many applications. Conventional SiPMs use high-ohmic polysilicon as quenching resistor, which forms a barrier for incident light, thus decreasing the PDE. Furthermore it's also one of the cost driving technological issues in fabrication.
By integrating the quenching resistor into the silicon bulk obstacles for light within the active area can be omitted and the fill factor of the device is only limited by the gaps necessary for optical crosstalk suppression. So this device is a promising candidate to achieve maximum PDE of up to 70%. In addition the absence of lateral high field regions on surface should improve the radiation hardness of the device. Results of the characterization of the in-house prototype production will be presented.