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HK: Fachverband Physik der Hadronen und Kerne
HK 39: Instrumentierung - Poster
HK 39.27: Poster
Wednesday, March 23, 2011, 14:00–16:00, Foyer Chemie
Development of radiation-hard sensors for the CBM silicon tracking system using simulation approach — •Sudeep Chatterji1 and Minni Singla2 — 1GSI Darmstadt — 2Goethe University Frankfurt
TCAD simulations have been done to understand the radiation damage in Double Sided silicon Strip Detectors for the Silicon Tracking System of the upcoming CBM experiment. We are using Sentaurus Device, a subpackage of SYNOPSYS. We have found a good agreement between simulations and measurements in terms of leakage current, full depletion voltage (VFD) and capacitances. To simulate radiation damage, we have changed the effective doping concentration and minority carrier lifetime with fluence (φ). We applied the University of Perugia trap model for the defect levels introduced with φ for both n-type and p-type silicon. The extracted damage constant matches with the experimental values. It has been found that the breakdown occurs in the coupling oxide at around 165 V and is independent of fluence while the VFD increases with φ due to reverse annealing. Hence we have to operate our detectors under-depleted. It is important to understand whether these DSSDs will be operational upto a φ of 1×1015 neqcm−2. From interstrip parameters namely interstrip capacitance (Cint) and interstrip resistance (Rint) one can understand strip isolation. Cint and Rint have been studied in detail with φ and it has been found that these DSSDs will be efficient even after maximum fluence. Supported by GSI, HIC for FAIR, EU FP7 Hadronphysics2