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Berlin 2012 – scientific programme

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DF: Fachverband Dielektrische Festkörper

DF 13: Poster II

DF 13.4: Poster

Wednesday, March 28, 2012, 15:00–17:30, Poster E

Electrical and Structural properties of thermally transformed high-k dielectric Ba0.7Sr0.3O thin films on p-Si(100) — •Shariful Islam1, Dirk Müller-Sajak1, Alexandr Cosceev2, Herbert Pfnür1, and Karl R. Hofmann21Leibniz-Universität Hannover, Inst. f. Festkörperphysik — 2Leibniz-Universität Hannover, Bauelemente der Mikro- und Nanoelektronik

Crystalline thin films of Ba0.7Sr0.3O were tested as a high-k dielectric material deposited on p-Si(100) substrate. The valence band offset and conduction band offset between p-Si(100) and Ba0.7Sr0.3O was ∼2.3eV and ∼1.0eV respectively.
It was observed that Ba0.7Sr0.3O was stable up to 4000C. At higher temperature silicon from the substrate diffuses into the oxide and forms a silicate, as found by XPS. SPA-LEED measurements showed that the silicate phase is amorphous once the reaction is completed (5500C). Electron Energy Loss Spectroscopy (EELS) of this silicate phase revealed a higher band gap ( ∼6eV) compared to crystalline Ba0.7Sr0.3O ( ∼4.3eV). XPS measurements prove that the silicate phase is more stable in ambient conditions than Ba0.7Sr0.3O. Extrapolations of dielectric constants at various conditions predict that also this silicate may be usable as a high-k dielectric.

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