Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 104: Quantum Dots and Wires: Optical Properties V (mainly Indiviual Photons)
HL 104.4: Vortrag
Freitag, 30. März 2012, 12:30–12:45, EW 201
Triggered indistinguishable photons from site-controlled In(Ga)As quantum dots — •Markus Müller1, Klaus D. Jöns1, Paola Atkinson2,3, Matthias Heldmaier1, Sven M. Ulrich1, Oliver G. Schmidt3, and Peter Michler1 — 1Institut für Halbleiteroptik und Funktionelle Grenzflächen and Research Center SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany — 2Institut des Nanosciences de Paris, UPMC, CNRS UMR 7588, 4 Place Jussieu, 75252 Paris Cedex 05, France — 3Institute for Integrative Nanosciences, IWF Dresden, Helmholtzstraße 20, 01069 Dresden, Germany
Self-assembled quantum dots (QDs) as solid-state single-photon sources are promising candidates for quantum information applications with particular respect to the generation of indistinguishable photons. For integration into emitter devices, individual control of the QD position is desirable. We investigate samples which consist of two vertically stacked layers of In(Ga)As QDs, where the local strain fields of the lower “seed” dot layers (SQDs) act as nucleation sites for QDs on top. The SQDs are grown on a pre-patterned GaAs substrate with a 12.5 x 12.5 µm2 grid of small pits. Micro-photoluminescence maps of QD and SQD layers verify their mutual correlation of position. High-resolution photoluminescence reveals ultra-narrow single QD emission linewidths of ∼ 10 µeV. Under quasi-resonant p-shell excitation we observe nearly background-free single-photon emission with g(2)(0)=0.02 and demonstrate the generation of triggered indistinguishable photon pairs with a high visibility up to 61%.