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Berlin 2012 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 10: Quantum Dots and Wires: Preparation and Characterization II (mainly Arsenides)

Monday, March 26, 2012, 11:15–13:15, EW 202

11:15 HL 10.1 Crystal Structure Tuning of Au-catalyzed Nanowires grown by MBEAndreas Rudolph, Marcello Soda, Dieter Schuh, Josef Zweck, Dominique Bougeard, and •Elisabeth Reiger
11:30 HL 10.2 GaAs/InAs - core/shell nanowires grown by SA-MOVPE — •Fabian Haas, Kamil Sladek, Andreas Winden, Martina von der Ahe, Thomas Weirich, Hilde Hardtdegen, and Detlev Grützmacher
11:45 HL 10.3 Growth of an InAs shell around GaAs nanowires — •Torsten Rieger, Mihail Ion Lepsa, Thomas Schäpers, and Detlev Grützmacher
12:00 HL 10.4 Fabrication of ultra-low density GaAs quantum dots by filling of self-organized nanoholes — •David Sonnenberg, Andreas Graf, Vera Paulava, Achim Küster, Christian Heyn, and Wolfgang Hansen
12:15 HL 10.5 Einfluss eines vergrabenen Stressors auf das Wachstum von InGaAs mit MOCVD — •David Quandt, Jan-Hindrik Schulze, Tim David Germann, André Strittmatter, Udo Pohl und Dieter Bimberg
12:30 HL 10.6 MOVPE grown InAs quantum dots on InGaAs strain reducing layers — •Matthias Paul, Jan Kettler, Elisabeth Koroknay, Michael Jetter, and Peter Michler
12:45 HL 10.7 Prepatterning of GaAs substrates using microsphere photolithography for the site-controlled growth of InP quantum dots — •Ulrich Rengstl, Elisabeth Koroknay, Moritz Bommer, Michael Jetter, and Peter Michler
13:00 HL 10.8 Relaxation of excited charge carriers in silicon nanocrystals embedded in silicon dioxide — •Andrey Moskalenko, Jamal Berakdar, Alexander Poddubny, Alexei Prokofiev, Irina Yassievich, and Serguei Goupalov
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