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Berlin 2012 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 11: Carbon: Nanotubes, Diamond and Silicon Carbid

Montag, 26. März 2012, 11:45–14:00, EW 203

11:45 HL 11.1 Electronic properties of silicon carbide surfaces and interfaces — •Andre Konopka, Tim Baumgarten, Siegmund Greulich-Weber, Eva Rauls, Wolf Gero Schmidt, and Uwe Gerstmann
12:00 HL 11.2 Electrical and Chemical Passivation of 6H-SiC Surfaces by Chlorine TerminationSebastian Schoell, •Matthias Sachsenhauser, John Howgate, Jose Garrido, Martin Brandt, Martin Stutzmann, and Ian Sharp
12:15 HL 11.3 H and Si interaction with 4H-SiC surfaces — •Elwira Wachowicz and Adam Kiejna
12:30 HL 11.4 Towards a quantum point contact on hydrogen-terminated single-crystalline diamond — •Moritz Hauf, Patrick Simon, Max Seifert, Markus Stallhofer, Martin Stutzmann, Alexander Holleitner, and Jose A. Garrido
12:45 HL 11.5 Charge transfer in diamond-based biohybrid systems for energy harvesting applications — •Michael Metzger, Roberta Caterino, Matthias Sachsenhauser, Martin Stutzmann, and Jose Antonio Garrido
13:00 HL 11.6 Carbon nanotube Fermi energy shifts upon deposition on a substrate revealed by Raman spectroscopy — •Benjamin Hatting, Sebastian Heeg, Frank Hennrich, Ralph Krupke, and Stephanie Reich
13:15 HL 11.7 Two-color pump-probe study of single-walled carbon nanotubes — •Olga A. Dyatlova, Christopher Koehler, Ermin Malic, Jordi Gomis-Bresco, Janina Maultzsch, Andrey Tsagan-Mandzhiev, Tobias Watermann, Andreas Knorr, and Ulrike Woggon
13:30 HL 11.8 Permanent Dipole Moments of Localized Carbon Nanotube Excitons — •Jan Glückert, Matthias Hofmann, and Alexander Högele
13:45 HL 11.9 Photoluminescence of pristine carbon nanotubes — •Matthias Hofmann, Jan Glückert, and Alexander Högele
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