Berlin 2012 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 16: II-VI Semiconductors I

HL 16.3: Vortrag

Montag, 26. März 2012, 15:30–15:45, EW 202

Li-doping of cubic ZnS grown on GaP (001) by chemical vapour deposition — •Gunther Haas, Udo Roemer, Stefan Lautenschlaeger, Sebastian Eisermann, Andreas Laufer, Melanie Pinnisch, and Bruno Karl Meyer — 1st Physics Institute, Justus-Liebig-University Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, DE-Germany

Chemical vapour deposition has been used to grow high quality zinc sulfide heteroepitaxial layers on GaP (001). The precursors of the growth process were metallic zinc and dihydrogen sulfide. Zinc sulfide is a wide band gap semiconductor, known to be challenging in terms of Li-doping with the purpose of p-type doping. In our experiments we used lithium amide as a lithium doping source. Our investigations of undoped as well as Li-doped layers show a clear dependence of the structural quality analyzed by X-Ray diffraction (XRD) and the surface morphology observed with atomic force microscopy (AFM) on the layer thickness. The surface morphology of undoped layers switches from nanometer scale crystallites to rough pyramid-like structures for layers thicker than ca. 1.8 µ m, while Li-doped layers exhibit a rippled surface. The incorporation of Li and Na into the layers was confirmed by secondary ion mass spectrometry (SIMS) and correlates with the intensity of acceptor bound excitons found in low temperature photoluminescence measurements.