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HL: Fachverband Halbleiterphysik
HL 20: Focus Session: Magnetic Semiconductors (jointly with MA)
HL 20.1: Talk
Monday, March 26, 2012, 16:30–16:45, EW 202
Cu-doped GaN: A ferromagnetic semiconductor — •Philipp R. Ganz1, Christoph Sürgers2,3, Gerda Fischer3, and Daniel M. Schaadt1,2,4 — 1Karlsruhe Institute of Technology, Center for Functional Nanostructures, 76049 Karlsruhe, Germany — 2Karlsruhe Institute of Technology, Institut für Angewandte Physik, 76049 Karlsruhe, Germany — 3Karlsruhe Institute of Technology, Physikalisches Institut, 76049 Karlsruhe, Germany — 4Institut für Energieforschung und Physikalische Technologien,TU Clausthal, 38640 Goslar, Germany
Nitride based spintronics has caused wide interest device applications due to the long and temperature-independent spin lifetime in InN quantum dots. For spin-injection in these quantum dots a ferromagnetic spin-aligner which yields high spin-polarization at room-temperature is necessary. Nitride based magnetic semiconductors are promising candidates. Because of possible clustering of magnetic dopands, non-magnetic dopands such as copper have raised interest over the last years. Theoretical predictions show the possibility of ferromagnetism and a high spinpolarization for Cu-doped GaN. We carried out a detailed study on the structural and magnetic properties for Cu-doped GaN, grown by plasma assisted molecular beam epitaxy, for various growth conditions. These films exhibit ferromagnetic behavior with a Curie temperature higher than 400 K in a small range of doping levels.