Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 21: Photonic Crystals I
HL 21.5: Vortrag
Montag, 26. März 2012, 18:00–18:15, EW 203
Photonic crystal slab based on nitride semiconductors — •Dominik Heinz1,2, Robert A. R. Leute1, Klaus Thonke2, Frank Lipski1, Tobias Meisch1, Thomas Wunderer3, Ingo Tischer2, Matthias Hocker2, and Ferdinand Scholz1 — 1Institute of Optoelectronics, Ulm University, Albert-Einstein-Allee 45, 89081 Ulm, Germany — 2Institute of Quantum Matter / semiconductor physics group, Ulm University, Albert-Einstein-Allee 45, 89081 Ulm, Germany — 3now at Palo Alto Research Center, Inc., 3333 Coyote Hill Road, Palo Alto, California 94304, USA
Photonic crystals are periodically modulated dielectric structures with a periodicity comparable to the considered wavelength regime. For realization of photonic crystals in the visible spectrum of light, sub-µm patterning is necessary. In this work, UV laser interference lithography has been used to realize photoresist structures with a periodicity of approximately 240 nm on areas of several square centimeters. These patterns were subsequently transfered to a mechanically stable titanium layer deposited on a gallium nitride (GaN) epitaxial layer using a lift-off technique. Finally, GaN-stripes with triangular cross section and GaInN quantum wells integrated on their side facets were grown by selective area metalorganic vapour phase epitaxy. For better selectivity, an in-situ nitridation step in hot ammonia atmosphere was performed before epitaxy. The resulting structures were characterized by angle resolved photoluminescence (ARPL) and cathodoluminescence. Directional modal extraction of guided light was observed in ARPL, and the respective photonic dispersion relation was determined.