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HL: Fachverband Halbleiterphysik

HL 24: Poster Session: Ge/Si/SiC / III - V Semiconductors

HL 24.23: Poster

Monday, March 26, 2012, 16:00–19:00, Poster D

Impact of p-type doping on Germanium self-diffusion — •Tobias Südkamp¹, Hartmut Bracht¹, Giorgia Scapellato², Elena Bruno², and Dominique Bougeard³ — ¹Institut für Materialphysik, WWU-Münster, Germany — ²Center MATIS CNR-IMM, University of Catania, Italy — ³Institur für Experimentelle und Angewandte Physik, Universität Regensburg, Germany

Self-diffusion in germanium (Ge) under n-type doping has been recently investigated by means of Ge isotope multilayer structures. The n-type dopants of interest such as phosphorus, arsenic and antimony were diffused from the surface into the isotope structure. The gradual change of the self-atom profile along the dopant profile reveals the dominance of doubly negatively charged vacancies. Similar experiments on the impact of p-type dopants on Ge self-diffusion are hampered by the slow diffusivity of acceptor dopants such as boron (B), aluminium and gallium. In order to study the self-diffusion of Ge under p-type doping we utilize a Ge isotope multilayer structure doped with B by implantation. Implantation of B was performed in an amorphous (^natGe/⁷³Ge)₁₀-multilayer structure grown by molecular beam epitaxy on a preamorphized Ge wafer. The amorphous, B-implanted samples were recrystallized by annealing and subsequently used for diffusion anneals. First results of this approach to study self-diffusion in Ge under p-type doping are presented.