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16:00 |
HL 24.1 |
Spin Noise Spectroscopy — •Fabian Berski, Carsten Schulte, Katharina-Sophie Isleif, Jens Hübner, and Michael Oestreich
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16:00 |
HL 24.2 |
Detection of high frequency spin dynamics via ultrafast spin noise spectroscopy — •Jan Gerrit Lonnemann, Fabian Berski, Hendrik Kuhn, Petrissa Zell, Georg Müller, Jens Hübner, and Michael Oestreich
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16:00 |
HL 24.3 |
Hole spin dynamics in 2D GaAs/AlGaAs systems at low temperatures — •Michael Kugler, Kamil Korzekwa, Pawel Machnikowski, Christian Gradl, Stephan Furthmeier, Michael Griesbeck, Marika Hirmer, Dieter Schuh, Werner Wegscheider, Tillmann Kuhn, Christian Schüller und Tobias Korn
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16:00 |
HL 24.4 |
Site-controlled In droplets on GaAs substrates by in situ focused ion beam implantation and droplet epitaxy — •Yu-Ying Hu, Dirk Reuter, and Andreas D. Wieck
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16:00 |
HL 24.5 |
Influence of dilute amounts of Nitrogen in GaAs - A comparison of simulated and experimental STEM HAADF-Z-Contrast measurements — •Nikolai Knaub, Andreas Beyer, Vivien Voßebürger, Rafael Fritz, Kakhaber Jandieri, Markus Heidelmann, and Kerstin Volz
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16:00 |
HL 24.6 |
Evolution & optical characteristics of self assembled III-nitride nanowires formed by reactive ion etching — •Anna Haab, Martin Mikulics, Toma Stoica, Jürgen Moers, Eli Sutter, Beata Kardynal, Sally Rieß, Andreas Winden, Hilde Hardtdegen, and Detlev Grützmacher
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16:00 |
HL 24.7 |
Epitaxial GaN around ZnO nanopillars — •Mohamed Fikry, Manfred Madel, Ingo Tischer, Ren Zhe, Klaus Thonke, and Ferdinand Scholz
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16:00 |
HL 24.8 |
Band alignment between III-V polytypes — •abderrezak belabbes, Christian Panse, Jürgen Furthmüller, and Friedhelm Bechstedt
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16:00 |
HL 24.9 |
Confinement effects and band gap tuning of III-Nitride nanowires — •Klaara Viisanen, Laura Oikkonen, Katri Laaksonen, Maria Ganchenkova, and Risto Nieminen
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16:00 |
HL 24.10 |
Growth mechanisms of thin GaN on AlN — •Konrad Bellmann, Abdul Kadir, Markus Pristovsek, and Michael Kneissl
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16:00 |
HL 24.11 |
Morphology and atomic structure of InGaN surfaces — •Sabine Alamé, Christian Friedrich, Daria Skuridina, Duc Dinh, Norbert Esser, Michael Kneissl, and Patrick Vogt
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16:00 |
HL 24.12 |
Das Temperaturverhalten von Cd dotiertem AlxGa(x−1)N — •Patrick Kessler, Sahar Hamidi, Sérgio Miranda, Katharina Lorenz und Reiner Vianden
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16:00 |
HL 24.13 |
Lifetime measurements on III-V solar cell relevant materials — •Anja Dobrich, Klaus Schwarzburg, Elias Martinez, Marinus Kunst, and Thomas Hannappel
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16:00 |
HL 24.14 |
Coherent phonon excitation in SiC — Toru Shimada, •Wiktor Pronobis, Martin Scheuch, Kamaraju Natarajan, Christian Frischkorn, Martin Wolf, and Tobias Kampfrath
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16:00 |
HL 24.15 |
Sol-Gel-assembly of micro-crystalline silicon carbide and EPR-measurements — •Tim Baumgarten, Andre Konopka, Eva Rauls, Wolf-Gero Schmidt, Uwe Gerstmann, and Siegmund Greulich-Weber
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16:00 |
HL 24.16 |
Light-induced electron spin resonance (LESR) studies of silicon vacancy centers in 6H-SiC — •Daniel Riedel, Andreas Sperlich, Hannes Kraus, Franziska Fuchs, Alexandra Soltamova, Pavel Baranov, Georgy Astakhov, and Vladimir Dyakonov
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16:00 |
HL 24.17 |
Spatially-resolved photoluminescence of silicon vacancy centers in 6H-SiC — •Franziska Fuchs, Georgy Astakhov, Alexandra Soltamova, Pavel Baranov, and Vladimir Dyakonov
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16:00 |
HL 24.18 |
Organic Functionalization of 3C-SiC Surfaces — •Matthias Sachsenhauser, Sebastian Schoell, Alexandra Oliveros, John Howgate, Martin Stutzmann, Stephen Saddow, and Ian Sharp
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16:00 |
HL 24.19 |
Isotopically modulated silicon and its thermoelectric properties — •Soizic Eon, Nadine Wehmeier, Hartmut Bracht, Georg Bastian, Arne Vogelsang, Saeed M. Ullah, Anton Plech, Christian Heiliger, and Dietrich Wolf
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16:00 |
HL 24.20 |
DLTS study on deep levels after aluminum gettering in FZ silicon — •Sarina Grevsmühl, Patricia Krenckel, Doaa Abdelbarey, and Michael Seibt
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16:00 |
HL 24.21 |
Measurement of the dependency of the defect density on the band gap in a-SiGe:H thin films — •Burkhard Gilles, Ulrich Heinzmann, Helmut Stiebig, Andreas Gondorf, Pavel Prunici, and Florian Maier
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16:00 |
HL 24.22 |
Photoluminescence spectra of SiGe quantum islands grown on prepatterned Si substrates: evidence of carrier interaction and biexcitonic transitions — •Petr Klenovský, Moritz Brehm, Vlastimil Křápek, Elisabeth Lausecker, Florian Hackl, Thomas Fromherz, Günther Bauer, and Josef Humlíček
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16:00 |
HL 24.23 |
Impact of p-type doping on Germanium self-diffusion — •Tobias Südkamp, Hartmut Bracht, Giorgia Scapellato, Elena Bruno, and Dominique Bougeard
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16:00 |
HL 24.24 |
Glancing Angle Deposition: Structural Aspects and Growth Modelling — Christoph Grüner, •Jens Bauer, and Bernd Rauschenbach
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16:00 |
HL 24.25 |
High throughput investigation of the thermoelectric properties of Si based compounds — •Ingo Opahle, Georg K. H. Madsen, and Ralf Drautz
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