Berlin 2012 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 24: Poster Session: Ge/Si/SiC / III - V Semiconductors

HL 24.24: Poster

Montag, 26. März 2012, 16:00–19:00, Poster D

Glancing Angle Deposition: Structural Aspects and Growth Modelling — Christoph Grüner, •Jens Bauer, and Bernd Rauschenbach — Leibniz-Institut für Oberflächenmodifizierung, Permoserstrasse 15, D-04318 Leipzig, Germany

Recently, considerable progress in understanding ballistic deposition has been achieved. Over a long time the topic was inscrutable, since it was not possible to simulate the structure evolution properly. New results in kinetic Monte Carlo studies showed that the large variety of contradicting results originates from the so-called grid-effect in on lattice-simulations. To avoid this problem Tanto et al. [1] proposed the usage of cluster particles for ballistic deposition modelling. We applied this novel conception to generate a fast and easy experiment-adaptable Monte Carlo simulation code. The nanostructure evolution in glancing angle deposition and the influence of the deposition parameters on the structural properties were studied in comparison between experiment and simulation. Substrates with nanoscopic pre-patterns were successfully applied to form arranged fields of nanostructures. The temporal evolution of ordered and disordered nanocolumns was investigated in simulation and experiment. Regarding the nanostructured film porosity two contributions have to be considered: an interstructure contribution because of the spatial nanostructure separation and an innerstructure contribution originating from distinct density changes within the nanostructures. The results are applied to describe macroscopic film properties as the film density and the effective refractive index.

[1] B. Tanto, C. F.  Doiron, T.-M. Lu: Phys. Rev. E 83 (2011) 016703