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HL: Fachverband Halbleiterphysik

HL 24: Poster Session: Ge/Si/SiC / III - V Semiconductors

HL 24.7: Poster

Monday, March 26, 2012, 16:00–19:00, Poster D

Epitaxial GaN around ZnO nanopillars — •Mohamed Fikry¹, Manfred Madel², Ingo Tischer², Ren Zhe¹, Klaus Thonke², and Ferdinand Scholz¹ — ¹Institut für Optoelektronik, Universität Ulm, Albert-Einstein-Allee 45, 89081 Ulm — ²Institut für Quantenmaterie, Gruppe Halbleiterphysik, Universität Ulm, Albert-Einstein-Allee 45, 89081 Ulm

We report on the investigation of the epitaxial quality of GaN layers forming non-polar m-plane facets grown coaxially around ordered ZnO nanopillars. The GaN layers were grown using Metal Organic Vapor Phase Epitaxy (MOVPE). For developing a scalable process, in a first step successful position control of single ZnO nanopillars grown on top of ordered GaN pyramids is achieved. At growth temperatures above 800°C and using hydrogen as a carrier gas, the ZnO nanopillars start to dissolve during the GaN growth, leaving hollow GaN nanotubes. A strong and broad luminescence at 2.8 eV indicates the presence of heavily Zinc doped GaN layers. Characterization involves photoluminescence, scanning electron microscopy, transmission electron microscopy and cathodoluminescence.