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HL: Fachverband Halbleiterphysik

HL 26: Poster Session: Heterostructures - Preparation and Characterization - Impurities / Amorphous Semiconductors

HL 26.11: Poster

Monday, March 26, 2012, 16:00–19:00, Poster D

Thermally oxidized copper thin films — •Philipp Hering, Martin Becker, Philipp Schurig, and Bruno K. Meyer — 1. phys. Inst., JLU Giessen, Heinrich-Buff-Ring 16, 35392 Giessen

Cuprous oxide (Cu2O) constitutes, despite the relatively large band gap (2.17 eV), a very promising absorber material in photovoltaic devices due to the high absorption coefficient, non-toxicity and great abundance of the composing elements. To investigate high quality cuprous oxide films, copper was deposited on quartz substrates via sputtering and then oxidized in a controlled nitrogen/oxygen atmosphere at temperatures ranging from 800 to 1050 °C. The resulting film quality was analyzed by XRD, AFM and Raman measurements. Electrical properties were investigated with Hall and admittance measurements.