Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 26: Poster Session: Heterostructures - Preparation and Characterization - Impurities / Amorphous Semiconductors
HL 26.9: Poster
Montag, 26. März 2012, 16:00–19:00, Poster D
Preparation of donor doped ZnO1−xSx layers and their application in hetero diode structures — •Achim Kronenberger, Julian Benz, Angelika Polity, Peter J. Klar, and Bruno K. Meyer — I. Physics Institute, Justus-Liebig-University, Heinrich-Buff-Ring 16, 35392 Giessen, Germany
The ternary system ZnO1−xSx can be prepared without any miscibility gap by sputter deposition techniques. ZnO1-xSx shows a strong band gap bowing which is caused by variations of the energetic position of the valence and conduction band. This can be utilized to minimize or eliminate disturbing band offset effects in hetero structure solar cells or to control the emission energy of light emitting hetero diodes. In our work aluminum and gallium doped ZnO1−xSx thin films were deposited from ceramic targets by radio frequency sputtering on glass, sapphire and p-type GaN substrates. Using oxygen as reactive gas in the sputtering process allowed to adjust the composition of the alloy. We present our results on the structural, optical and electrical properties of the ZnO1−xSx films and report on the performance of ZnO1−xSx/GaN hetero diodes.