Berlin 2012 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 3: Focus Session: VECSEL

HL 3.3: Topical Talk

Montag, 26. März 2012, 10:30–11:00, ER 164

GaSb-based VECSELs for the 2−3 µm wavelength range — Marcel Rattunde, •Sebastian Kaspar, Tino Töpper, Christian Manz, Klaus Köhler, and Joachim Wagner — Fraunhofer Institut für Angewandte Festkörperphysik (IAF), Tullastr. 72, 79108 Freiburg, Germany

In recent years, vertical external cavity surface emitting lasers (VECSELs) have attracted increasing interest due to their capability of delivering simultaneously high output power and excellent beam quality, together with their suitability for the realization of tunable and single-frequency laser emission. Recently, the realization of high-performance VECSELs based on the (AlGaIn)(AsSb) material system with emission wavelengths around 2 µm and above has been reported. Such high-brightness laser sources are of interest for a range of applications such as long range sensing, medical therapy and diagnostics as well as seeding and pumping of solid state or fiber lasers. In this report we will present recent advances achieved using our GaSb-based VECSEL technology. In a high-power configuration, up to 10 W output power in CW-operation were demonstrated at 2.0 µm. With intracavity filters, tunable single-frequency laser modules were realized with a tuning range of 70-120 nm (depending on the cavity details). The emission linewidth (measured with a heterodyne beat note setup) was below 100 kHz (100 µs sampling time) at an output power above 1 W in CW operation. These results highlight the versatility of this concept for high-power, tunable and narrow-linewidth lasers in the 2−3 µm wavelength range.