Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 30: ZnO and Relatives I
HL 30.4: Vortrag
Dienstag, 27. März 2012, 10:15–10:30, EW 202
Patterned growth of ZnO nanopillars on GaN — •Manfred Madel1, Mohamed Fikry2, Ingo Tischer1, Benjamin Neuschl1, Uwe Röder1, Martin Feneberg1, Tobias Meisch2, Frank Lipski2, Dominik Heinz1, Martin Dickel1, Robert Leute2, Ferdinand Scholz2, and Klaus Thonke1 — 1Institut für Quantenmaterie / Gruppe Halbleiterphysik, Universität Ulm — 2Institut für Optoelektronik, Universität Ulm
Well ordered arrays of ZnO nanopillars are grown on GaN layers. For the patterning we employ self-assembling polystyrene (PS) spheres, laser interference, and photo lithography. As a patterning mask a thin layer of SiO2 is deposited onto the epitaxial GaN layer. Using selective reactive ion etching, holes in the SiO2 layer are created, through which ZnO nanopillars are grown by CVD. For spacings in the 250 nm range laser interference lithography and evaporation of Ti as a growth mask is used. To get nanopillars with homogeneous distances of several µ m, GaN pyramids are first grown in hexagonal arrangements using photolithography. In a subsequent ZnO growth process, one single nanopillar on each pyramid could be generated. The nanopillars have diameters between 200 and 800 nm and uniform length up to 5 µ m. Very good crystal perfection and excellent structural definition is shown in SEM characterization as well as in PL, CL, and HRXRD measurements.