Berlin 2012 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 33: Ge/Si II

HL 33.5: Vortrag

Dienstag, 27. März 2012, 10:30–10:45, EW 015

Focused ion beam induced damage in germanium and synthesis of free-standing germanium nano-webs — •Rupert Langegger, Alois Lugstein, and Emmerich Bertagnolli — Institute of Solid State Electronics, Floragasse 7, A-1040, Vienna, Austria

Efficient light emitters compatible with standard CMOS technology have been a subject of research for more than a decade. The influence of strain and doping concentration on the efficiency of the luminescence in germanium has been already studied. To further comprehend processes in nanoscale regime we intensively investigated germanium under various conditions.

Germanium was irradiated with focussed Ga+-ions with a kinetic energy of 30 keV. The surface modifications as a function of angle of ion beam incidence, fluence and surface temperature has been investigated by scanning electron microscopy and AFM imaging. The photoluminescence-properties were investigated with a WITec alpha300 and an excitation wavelength of 532nm.

At room temperature physical sputtering was observed leading to ripples on the Germanium surface. At a substrate temperature of T=600°C physical sputtering was observed leading to flat bottomed boxes independent of the ion fluencies.

Furthermore we present an approach for focused ion beam induced synthesis of free-standing germanium nano-webs with a thickness below 20 nm and luminescence in the near-infrared region.