Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 37: Quantum Dots and Wires: Optical Properties I (mainly InGaAs Dots)
HL 37.6: Vortrag
Dienstag, 27. März 2012, 12:00–12:15, ER 164
Symmetry adapted formalisms to calculate elastic and electronic properties of (111)-oriented zincblende quantum dots — •Oliver Marquardt1, Miguel A. Caro1,2, Stefan Schulz1, and Eoin P. O’Reilly1,2 — 1Tyndall National Institute, Lee Maltings, Cork, Ireland — 2University College Cork, Cork, Ireland
(111)-oriented, site-controlled InGaAs quantum dots (QDs) are highly promising candidates for the generation of entangled photons, required for novel quantum logical and quantum cryptographic applications. Whereas conventional zincblende QDs grown along the [001] direction exhibit a non-vanishing fine structure splitting (FSS) intrinsically, the C3v-symmetry of (111)-oriented QDs is high enough to allow for a vanishing FSS, as was recently confirmed experimentally. Due to the extremely small aspect ratio together with the huge size of these structures, the simulation of the electronic structure of such systems is computationally highly expensive. We have therefore analytically rotated the eight-band k·p formalism, together with a continuum elasticity model, to allow for an efficient and accurate description of such QDs in a (111)-oriented cell that allows for different discretizations along in-plane and growth directions. Here we analyze realistic (111)-grown InGaAs QDs and provide a detailed picture of their elastic and electronic properties. Our formalisms for (111)-oriented zincblende systems also allows us to gain some more insight into the material parameters of wurtzite semiconductor materials.
[1]: O. Marquardt et al., to be submitted.
[2]: S. Schulz et al., Phys. Rev. B 84, 125312 (2011).